GaN EPI Wafer

GaN Process Wafer

GaN FET

先進鍍膜技術

  • 氮化鎵磊晶片｜GaN EPI Wafer
圖片P/NSizeBarrier Layer AL CompositionFWHM (0002) ArcsecTotal EPI Thickness (nm)Wafer Bowing (um)Particle Count (ea)PDF
000S06EP01
6" EPI
0.20~0.25±0.02
~750
4200 ±10%
+/-50um
~500
000S08EP01
8" EPI
0.20~0.25 ±0.02
~750
4200 ±10%
+/-80um
~500
  • 氮化鎵芯片｜GaN Process Wafer
圖片P/NSizeX(μm)Y(μm)Rds(on) Typ. (mΩ)Ids(max.) (A)PDF
245S06PM01
6" Wafer
1300
2050
220mΩ
9A
130S06PM01
6" Wafer
2000
2800
120mΩ
18A
  • GaN FET
FigureP/NConfigurationVDS(V)RDS(on) (mΩ)IDS(max) (A)PackageStatusDatasheet
GPT65Z3YMR
Cascode
650V
245mΩ
9A
DFN8080
Mass Production
GPT65Z4YMR
Cascode
650V
130mΩ
18A
DFN8080
Mass Production
GPT65Z4WMR
Cascode
650V
130mΩ
23A
TO220
Small Volume Production