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Gallium Nitride Semiconductor Technology Personnel.
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Revolutionizing the electronics industry with GaN.

The company was established in 2018 with a registered capital of NTD 500 million. Its production base is located in the Zhunan Science Park, and its EPI production capacity is over 3,000 wafers per year.

To produce gallium nitride (GaN) power transistors by transferring 6-inch and 8-inch GaN power epitaxy technology from a major Japanese manufacturer.

Our main product line consists of GaNFETs 650V (DFN, TO220), with over 35 patented technologies.

We sell EPI/Process wafers/GaN FET and provide foundry services.

Our company is formed by a technical team consisting of experienced gallium nitride (GaN) semiconductor professionals from the former Guangjia Optoelectronics and highly skilled circuit design experts.

In addition to continuously developing 650V withstand-voltage epitaxy technology, products with a withstand voltage below 200V will also be developed to meet a wider range of applications.

  • The GPT GaN FET has been applied to 38W, 45W, and 65W PD power fast charging solutions.
  • GPT’s goal is to develop the best EPI and FET power devices to supply the market.
  • GPT has developed GaN on Si epitaxy, wafer process, BGBM, point test, packaging of FET devices, power management scheme design and other engineering integrations in just two years. This successful experience can provide allied industries with a rapid establishment of third-generation semiconductor supply chains.

GaN Power Technology Co., Ltd., a third-generation GaN semiconductor manufacturer, rapidly combines its various advantages to establish an industrial strategic alliance to jointly develop the market. Third-generation semiconductors will become another important pillar in safeguarding the country’s technological sovereignty.