【經濟日報】GaN Power Tech. Ltd. obtained the silicon nitride gallium material production technology through technology transfer from NTT-AT.

On the 21st of this month, Taiwan’s GaN Power Tech. Ltd. signed an exclusive cooperation agreement with Japan’s NTT-AT company. NTT-AT will transfer the silicon nitride GaN epitaxial technology and mass production process equipment, which can be used to manufacture various power components using GaN materials. This cooperation is a great boost to GaN Power Tech. Ltd.’s leading process technology for producing epitaxial wafers and power components using silicon nitride GaN. It marks the beginning of long-term strategic cooperation between the two parties, with more collaborative projects expected in the future. The signing ceremony was witnessed by top-level executives from both companies, as well as officials and representatives from the Industrial Development Bureau of the Ministry of Economic Affairs, the Investment Commission, the Taiwan-Japan Relations Association, the Taiwan Wind Energy Association, and other organizations.

Although GaN Power Tech. Ltd. is a newly established company this year, its main technical team comes from the LED epitaxial chip and wafer manufacturing team of former GPPC. GaN Power Tech. Chairman Yan Zong-xian stated that silicon nitride gallium (GaN) is a key semiconductor material, and the power devices made from it have the characteristics of small size and high power. Obtaining the key technology granted by NTT-AT, GaN Power Tech. will work with its upstream, midstream, and downstream partners to manufacture various power-saving and high-frequency application devices using the new technology of silicon nitride gallium materials. The development prospects are very promising, with a wide range of applications such as AI intelligent robots, 5G telecommunications base stations, smart appliances, and electric vehicles. Currently, the voltage withstand of the power devices ranges from 650V and will be expanded to 750V, 900V, and 1,000V.

The head of NTT-AT, Sakai Yoshihisa, who came to Taiwan to sign the contract, said that the advantage of the small size of the silicon nitride gallium material will make the end products smaller in size and save space for devices. Its characteristics of high temperature resistance and high voltage resistance also make it the best solution for applications. In addition, it is lightweight and can be used in batteries to enhance battery life. Many related companies using silicon nitride gallium materials also attended this important Taiwan-Japan cooperation event, and it is expected to generate changes and new business opportunities soon, injecting vitality into Taiwan’s electronics and technology industry.

【經濟日報】【記者孫震宇報導】