However, as process nodes advance, sensitivity to Electrostatic Discharge (ESD) increases significantly. Taking 7nm mobile chips as an example, ESD-induced Device Breakdown during packaging has long been a primary pain point for yield loss. For high-end AI chips with astronomical unit prices, even the slightest electrostatic damage translates into massive financial losses.

A Breakthrough in ESD Control

To address these rigorous challenges, GaN Power Tech has announced a breakthrough in ESD-control surface treatments. Industry sources indicate that leading global memory manufacturers now strictly require magazine surface resistivity to be precisely controlled between 10⁶-10⁸Ω to push packaging yields toward 100%. Furthermore, in high-growth CoWoS / CoWoP multi-layer stacking processes, the requirements for tooling ESD control are even more stringent, requiring stable maintenance within the 10⁶-10⁸Ω range to withstand the precision handling of multi-layer stacking.

Superior Performance and Yield Enhancement

GaN Power Tech’s proprietary nano-coating technology is engineered specifically to meet these market demands. Beyond providing stable surface ESD control, it offers high wear resistance and thermal stability (up to 200°C) — properties often lacking in traditional hard-anodizing treatments.

Empirical data shows that by implementing GaN Power Tech’s solution, overall yield can be improved by approximately 0.2%. In the context of advanced packaging lines, this 0.2% margin represents millions of dollars in added production value.

Operational Excellence and ESG Sustainability

Beyond technical performance, GaN Power Tech delivers a powerful competitive edge in operational efficiency. By extending the service life of tooling from the industry standard of 8–12 weeks to an impressive 40–50 weeks (a 100%+ increase), the technology significantly reduces replacement frequency. This helps semiconductor manufacturers slash total tooling costs by 30% to 50%.

While balancing performance and cost-efficiency, GaN Power Tech also assists enterprises in achieving their ESG sustainability goals. With this “Yield Shield” technology, GaN Power Tech is fortifying a critical line of defense for the semiconductor supply chain in the global race for AI supremacy.

In addition to GaN power components, GaN Power has exclusively developed antistatic coating (CAC) technology that is resistant to high temperatures of 300 degrees and wear-resistant to 350 meters. It has not only passed SGS certification, but has also tested AI process fixture applications in world-renowned semiconductor manufacturers. It has demonstrated outstanding performance and is expected to significantly reduce costs by up to 50%, far better than existing technologies.

GaN Power Technology revealed that there is an urgent need to combat static electricity in semiconductor manufacturing processes. In high-precision fields such as AI computing, electric vehicles and low-orbit satellites, expensive chips will suffer heavy losses if they are affected by static electricity. CAC technology can provide excellent protection and improve process yield.

The product quality has been recognized. In 2023, GaN Power’s 65W GaN charger was sold to Japanese telecom company NTT-AT. In 2024, the Taiwan version of the mobile phone charger was launched. Many listed companies are willing to use it as souvenirs for shareholders’ meetings. GaN Power Technology is working hard to develop a 500-degree high-temperature CAC, which is expected to be launched next year to provide the best electrostatic protection for high-precision applications such as AI, electric vehicles and low-orbit satellites.

Looking forward to the future, GaN Power Technology will continue to focus on the research and development of GaN epitaxial and CAC anti-static technologies, keep abreast of the pulse of AI computing and high-precision industries, provide customers with the best solutions, and strive to seize the huge business opportunities brought by the AI ​​boom.

From：工商時報

GaN Power Tech cooperates with NTT-AT, a subsidiary of Japan Telecom Group, to introduce gallium nitride fast charging into the Japanese market and become the first GaN manufacturer in Taiwan to enter the supply chain system of a well-known Japanese group. It has continued to cooperate with major Japanese manufacturers to develop a new 100W gallium nitride fast charger, which is expected to be released next year. In the future, it will cooperate with major mobile phone manufacturers to introduce GaN power components into its brands of fast chargers and actively enter the international market.

In addition, GaN Power Techis also actively developing semiconductor technology. With the application of AI, electric vehicles, and low-orbit satellites, semiconductor components are fully introduced into advanced processes below 10 nanometers. However, during the packaging process, problems such as severe electrostatic effects and reduced production yield will be encountered; Hong Gallium has launched a new world-leading resistant Antistatic technology with high temperature of 300°C and high wear resistance can not only be used to improve the yield of GaN packaging processes, but also provide high-efficiency, high-reliability antistatic solutions for the advanced semiconductor industry market.

GaN Power Tech stated that the company’s R&D team has long been committed to the research and development of new semiconductor-grade materials. Among them, the latest generation of anti-static technology can form a dense anti-static layer on the surface of metal materials that can withstand high temperatures up to 300°C, creating high wear resistance on the surface. The nano-level coating, which is durable and has a long life, can control the surface resistance value between 10⁵ and 10⁹ Ω, effectively preventing the accumulation of static electricity. This technology not only provides reliable defense during the production process, but also ensures that semiconductor equipment is not affected by static electricity during use, improving product reliability.

GaN Power Tech further analyzed that this anti-static technology has better characteristics than existing anti-static technology and is not subject to size restrictions. Therefore, the cost is more competitive than existing anti-static coating technology and can be widely used in various aspects of semiconductor manufacturing. The manufacturing process includes manufacturing, packaging and testing. Samples have been sent to major manufacturers for packaging and testing. It is expected that the results will be quickly seen in advanced coating performance next year.

From：工商時報

The investment amount for this case is about NT$200 million. The company will develop the third-generation semiconductor, including GaN power epitaxial wafers and GaN power transistors. Besides its own technologies, the company has also obtained epitaxial technology from NTT-AT of Japan. The design, production, and sales of products will be integrated with multiple manufacturers. The products will be applied in industries such as solar energy storage, new energy vehicles, industrial automation, and 5G high-frequency communication. This investment is expected to help promote the formation of a high-tech industry cluster in central Taiwan.

According to TrendForce’s research forecast, GaN power components are mainly used in consumer products, and the market size is expected to reach US$850 million by 2025, with a compound annual growth rate of up to 78% from 2020 to 2025, showing significant market potential.

From：中部科學園區

In the face of the ongoing global COVID-19 pandemic, GaN Power Tech. and NTT have used GaN components to develop high-intensity UVC sterilization boxes that use UVC deep ultraviolet light to achieve disinfection and sterilization effects. The products are all made in Taiwan and have been launched in Japan. While the epidemic in Taiwan is easing, Chairman Yan Zong-Xian stated that prevention measures cannot be relaxed, and he hopes to contribute to the fight against the pandemic by donating 30 UVC sterilization boxes to Taichung Tzu Chi Hospital.

Construction of 5G base stations is in full swing in many countries, and many related component manufacturers in Taiwan have benefited from this. GaN Power Tech. is targeting power solutions. Chairman Yan Zong-Xian stated that in order to save space and rental costs, it is more advantageous to reduce the size of the power supply for 5G base stations, and the use of GaN is currently the most promising solution to achieve this goal.

Wang Xing-Ye, the executive vice president of GaN Power Tech., pointed out that GaN has advantages such as high switching speed, low loss, and small size, which can effectively improve system efficiency and solve component heat dissipation problems. GaN power components from GaN Power Tech. can already be mass-produced and shipped, and RF radio frequency research and development is underway, with trial production expected next year.

Wang Xing-Ye stated that currently, GaN FETs (field-effect transistors) are used by global laptop manufacturers in the fast charging function and size reduction of laptop power converters, winning favor from consumers. The rapid charging of 5G base station RF devices and power supplies, server power supplies, electric vehicle charging piles, and consumer electronics products will be the key market driving GaN’s rapid growth.

GaN Power Tech. has partnered with 5G base station suppliers through Hong Kong-funded company ESEA Energy Tech. ESEA Energy Tech is a distributor for Murata in Japan, primarily selling Murata capacitors and filters to 5G-related manufacturers such as China Electronics and dozens of other 5G product manufacturers. It also includes fast charging products from Xiaomi, among others. GaN Power Tech. is expected to quickly increase its market share in the 5G base station power market and enter the fast charging market for mobile phones and laptops by leveraging this partnership.

From : 【工商時報】