The Energy saving advantage of GaN Power device bring more thinner, lighter, smaller, faster transmission of innovation technology.
The Energy saving advantage of GaN Power device bring more thinner, lighter, smaller, faster transmission of innovation technology
In response to the future market demand for high-end power management ICs and power amplifiers in electric vehicles, 5G high-speed communications and other industries, GaN Power Technology Co., Ltd. (referred to as GPT) and Japan’s NTT-AT Co., Ltd. have developed a leading industry- high breakdown voltage of more than 650V GaN-On-Si power components and GaN-On-SiC epitaxial wafers, breaking through the competition of international manufacturers such as Europe, America and Japan, and seizing the business opportunities of automotive electronics and AI smart control chips with advanced technology in these emerging market.
Taiwan GPT with Japan’s NTT-AT company signed an exclusive cooperation contract, Japan’s NTT-AT technology transfer GaN on Si EPI technology and mass production process equipment and GaN material application to GPT to produce a variety of power components, therefore this leading process technology of GaN on Si to produce EPI chip and power components make GPT become more stronger. This time, it is the beginning of long-term strategic cooperation between the two sides, and it will be expected there are more items for both companies to cooperate in the future.