The Energy saving advantage of GaN Power device bring more thinner, lighter, smaller, faster transmission of innovation technology.
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The Energy saving advantage of GaN Power device bring more thinner, lighter, smaller, faster transmission of innovation technology
In response to the future market demand for high-end power management ICs and power amplifiers in electric vehicles, 5G high-speed communications and other industries, GaN Power Technology Co., Ltd. (referred to as GPT) and Japan’s NTT-AT Co., Ltd. have developed a leading industry- high breakdown voltage of more than 650V GaN-On-Si power components and GaN-On-SiC […]
Taiwan GPT with Japan’s NTT-AT company signed an exclusive cooperation contract, Japan’s NTT-AT technology transfer GaN on Si EPI technology and mass production process equipment and GaN material application to GPT to produce a variety of power components, therefore this leading process technology of GaN on Si to produce EPI chip and power components make […]
- Japan Economic News2020-08-10 - 8:53 am
- Japan Report2020-08-10 - 8:48 am
- GPT Enter HsinChu Science Park In Alliance With Japan’s NTT-AT Company For The Business Opportunity Of 5G, Electric Vehicle By 3rd Generation Semiconductor Power Device2020-08-10 - 8:43 am
- GaN Power Technology Acquires NTT-AT’s GaN On Si Manufacturing Technology Transfer2020-08-10 - 8:36 am
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