The Energy saving advantage of GaN Power device bring more thinner, lighter, smaller, faster transmission of innovation technology.
This author has not written his bio yet.
But we are proud to say that admin contributed 4 entries already.
Entries by admin
The Energy saving advantage of GaN Power device bring more thinner, lighter, smaller, faster transmission of innovation technology
In response to the future market demand for high-end power management ICs and power amplifiers in electric vehicles, 5G high-speed communications and other industries, GaN Power Technology Co., Ltd. (referred to as GPT) and Japan’s NTT-AT Co., Ltd. have developed a leading industry- high breakdown voltage of more than 650V GaN-On-Si power components and GaN-On-SiC […]
Taiwan GPT with Japan’s NTT-AT company signed an exclusive cooperation contract, Japan’s NTT-AT technology transfer GaN on Si EPI technology and mass production process equipment and GaN material application to GPT to produce a variety of power components, therefore this leading process technology of GaN on Si to produce EPI chip and power components make […]
- Japan Economic News2020-08-10 - 8:53 am
- Japan Report2020-08-10 - 8:48 am
- GPT Enter HsinChu Science Park In Alliance With Japan’s NTT-AT Company For The Business Opportunity Of 5G, Electric Vehicle By 3rd Generation Semiconductor Power Device2020-08-10 - 8:43 am
- GaN Power Technology Acquires NTT-AT’s GaN On Si Manufacturing Technology Transfer2020-08-10 - 8:36 am
- Taiwan Office
7F.-10, No. 262, Sec. 2, Henan Rd., Xitun Dist., Taichung City 407, Taiwan
Tax ID.: 50832401